MRF8P26080HSR3

Overview

The MRF8P26080HSR3 is an N-channel enhancement-mode lateral RF power MOSFET designed for base station applications. It operates in the frequency range of 2300 to 2400 MHz, delivering an average output power of 80 W. The device utilizes a surface-mount NI-780S-4 package and supports Class AB and Class C operation modes.

Feature Summary

• High power density design optimized for efficient motor control and RF applications
• Fast switching speed capabilities for enhanced performance
• N-channel enhancement-mode lateral structure

Applications

• W-CDMA base station systems
• LTE base station systems
• Efficient motor control applications

Procurement Notes

Verify the specific datasheet version from Freescale Semiconductor or authorized distributors to confirm current active status and detailed electrical characteristics. Ensure compatibility with NI-780S-4 mounting requirements and thermal management specifications for the intended application environment.

Selection Notes

Select this component for designs requiring 80 W output at 2300-2400 MHz. Consider the surface-mount package constraints and thermal dissipation needs. Verify that the driving circuitry supports the required gate drive levels for Class AB or Class C operation modes effectively.

Part Context

This part belongs to the MRF8P series of RF power field effect transistors manufactured by Freescale Semiconductor. These devices are characterized by high power density and are engineered for robust performance in demanding wireless communication infrastructure environments.

Replacement Considerations

Consult official Freescale Semiconductor documentation for verified substitute part numbers. Cross-reference must match the NI-780S-4 package, 80 W power rating, and 2300-2400 MHz frequency range.