MRF8P29300HR6

MRF8P29300HR6

  • Description:RF MOSFET LDMOS 30V NI1230
  • Series:-

SKU:0eff1e658d56 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V NI1230
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.9GHz
  • Gain:13.3dB
  • Voltage - Test:30 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:320W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-1230
  • Supplier Device Package:NI-1230
  • Configuration:Dual

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MRF8P29300HR6

Overview

The MRF8P29300HR6 is a lateral N-channel broadband RF power MOSFET designed for high-power applications. It operates within the 2700–2900 MHz frequency range and delivers 320 W of output power at a 30 V supply voltage. The device utilizes a Case 375D-05 package with Style 1 NI-1230 configuration. Maximum ratings include a drain-source voltage of -0.5 to +65 VDC and a gate-source voltage of -6.0 to +10 VDC. Thermal characteristics specify a case temperature limit of 150°C, an operating junction temperature up to 225°C, and a storage temperature range from -65 to +150°C.

Feature Summary

  • Lateral N-channel broadband RF power MOSFET architecture
  • Push-pull table configuration for balanced operation
  • High thermal stability with junction temperature up to 225°C

Applications

  • Broadband RF power amplification in the 2700-2900 MHz band
  • Military communication systems requiring high linearity
  • Electronic warfare and signal intelligence platforms

Procurement Notes

Verify the specific suffix (R6) confirms the tape and reel packaging specification of 150 units on a 56 mm wide, 13-inch reel. Confirm the document revision matches Rev. 0 dated February 2011. Ensure the component meets RoHS compliance standards as indicated in official datasheets. Cross-reference the Case 375D-05 package style with mechanical drawings before integration.

Selection Notes

Select this component for designs requiring 320 W output in the 2.7-2.9 GHz spectrum. The 30 V bias requirement differs from standard 50 V LDMOS devices, necessitating compatible power supplies. The lateral MOSFET structure offers distinct thermal and impedance characteristics compared to vertical technologies. Evaluate the push-pull topology requirements against system size constraints.

Part Context

This part belongs to NXP's MRF8P series of lateral N-channel broadband RF power MOSFETs. These devices are engineered for demanding RF environments where high power density and broad bandwidth are critical. The series supports various packaging options, including the R6 suffix variant specified here, catering to automated assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit topologies if considering alternative lateral MOSFETs from other manufacturers.

MRF8P29300HR6MRF8P29300HR6

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