MRF8P8300HSR6

Overview

The MRF8P8300HSR6 is an N-channel enhancement-mode lateral MOSFET designed for W-CDMA and LTE base station applications in the 750 to 820 MHz frequency range. It supports Class AB and Class C operation with a typical single-carrier W-CDMA output power of 96 Watts average at VDD = 28 Volts and IDQ = 2000 mA. The device delivers a drain efficiency of approximately 35.7% and handles up to 10:1 VSWR at 32 Vdc. It features internal matching, integrated ESD protection, and is supplied in tape and reel packaging.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Optimized specifically for Doherty amplifier configurations
• Enhanced ruggedness capable of handling high voltage standing wave ratios

Applications

• W-CDMA cellular base station power amplification
• LTE cellular base station power amplification
• Digital predistortion error correction systems
• Doherty amplifier architectures

Procurement Notes

Verify the specific suffix SR6 indicates the tape and reel configuration containing 150 units on a 56 mm tape width and 13-inch reel. Confirm that the component originates from Freescale Semiconductor documentation, noting that NXP USA Inc. acquired these assets. Ensure the ordering part number matches the exact datasheet designation to guarantee correct package and quantity specifications.

Selection Notes

Select this component for wideband RF power applications requiring high linearity and efficiency in the 750 to 820 MHz band. It is suitable for designs utilizing digital predistortion or Doherty topologies. Verify thermal management requirements against the junction-to-case thermal resistance values provided in the datasheet. Ensure the system can support the specified operating voltage and quiescent current conditions for optimal performance.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF8P8300H family developed by Freescale Semiconductor. The HS variant denotes the specific tape and reel packaging format. The device represents a solution for cellular infrastructure, bridging the gap between high power output and linear modulation requirements for modern wireless communication standards.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

Does the device require external matching networks?

No, the device is internally matched on both the input and output sides for ease of use.

What is the typical drain efficiency at 820 MHz?

The typical drain efficiency is 35.7% under standard test conditions.