MRF8S18120HR3

Overview

The MRF8S18120HR3 is an L-band silicon N-channel RF power MOSFET manufactured by Freescale Semiconductor. It utilizes the HV8 technology platform and is housed in a ceramic metal-sealed cofired NI-780HS package (Case 465A-06). The device features a single enhancement-mode configuration with two pins, where the case serves as the source connection. Key electrical specifications include a minimum drain-source breakdown voltage of 65 V. It is designed for high-power radio frequency applications within the L-band spectrum.

Feature Summary

• Utilizes HV8 silicon technology for robust RF power performance
• Features a ceramic metal-sealed cofired package for thermal stability
• Designed as a single enhancement-mode N-channel MOSFET

Applications

• L-band radio frequency power amplification
• Commercial broadcast transmitter stages
• Industrial broadband RF systems

Procurement Notes

Verify the specific suffix 'HR3' against official NXP/Freescale documentation to confirm exact tape-and-reel packaging and RoHS compliance status. Ensure the ordering part number matches the required pin configuration and case outline dimensions specified in the datasheet. Confirm that the component meets all environmental and material declarations required for your assembly process.

Selection Notes

Select this component when designing L-band amplifiers requiring high power output with a 65V breakdown rating. The NI-780HS package offers distinct thermal management capabilities suitable for high-duty-cycle operations. Consider the single-ended configuration and source-connected case topology when developing matching networks and grounding schemes for optimal RF performance.

Part Context

This device belongs to the MRF8S series of RF power transistors from Freescale Semiconductor, now part of NXP. The series is characterized by its use of advanced silicon processes optimized for high-frequency, high-power density applications. These components are widely utilized in communication infrastructure where reliability and linearity in the L-band are critical requirements.

Replacement Considerations

Consult official cross-reference guides for direct substitutes. Verify that any alternative maintains identical pinout, package dimensions, and electrical ratings such as the 65V breakdown voltage and L-band frequency range.