MRF8S18120HSR3

Overview

The MRF8S18120HSR3 is an L-band silicon N-channel RF power MOSFET manufactured by Freescale Semiconductor. It operates in the L band frequency range and utilizes enhancement mode technology. The device is housed in a ceramic metal-sealed cofired flatpack package, specifically CASE 465A-06, featuring two pins with the source connected to the case. It has a minimum drain-source breakdown voltage of 65 V and is RoHS compliant.

Feature Summary

• L-band silicon N-channel RF power MOSFET construction
• Enhancement mode operation for single configuration
• Ceramic metal-sealed cofired flatpack packaging

Applications

Procurement Notes

Verify the manufacturer designation as Freescale Semiconductor or its successor entity when sourcing this component. Confirm the specific package code CASE 465A-06 matches the required physical footprint. Ensure the RoHS compliance status aligns with current regulatory requirements for the intended deployment environment.

Selection Notes

Select this component for applications requiring L-band RF power amplification using silicon MOSFET technology. The 65 V minimum breakdown voltage defines the operational limits. The flatpack form factor dictates the thermal management and mounting strategy. Verify compatibility with the target circuit's impedance matching network.

Part Context

This part belongs to the RF power transistor category, specifically designed for radio frequency applications. It represents a discrete semiconductor device used in signal generation and amplification chains. The L-band specification places it within a defined microwave frequency spectrum suitable for various communication systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires consulting official manufacturer replacement guides or equivalent technical specifications from other vendors.

FAQ