MRF8S18120HSR5

Overview

The MRF8S18120HSR5 is an N-channel enhancement-mode lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 1805 MHz and 1880 MHz. It supports Class AB and Class C modulation formats with a drain-source voltage of 65 Vdc and an operating voltage of 32 Vdc. The device delivers 72 Watts CW output power at 49.8% drain efficiency and achieves a typical P1dB compression point of 120 Watts. It features internal input and output matching, integrated ESD protection, and RoHS compliance.

Feature Summary

• Internally matched on both input and output ports to simplify circuit design
• Optimized specifically for Doherty amplifier configurations
• Integrated electrostatic discharge (ESD) protection mechanisms
• Enhanced negative gate-source voltage range for improved Class C operation

Applications

• GSM base station power amplifiers
• GSM EDGE base station power amplifiers
• Class AB cellular base station modulation formats
• Class C cellular base station modulation formats
• Doherty amplifier architectures

Procurement Notes

Verify the specific suffix designation against official documentation to confirm packaging configuration. Confirm current product lifecycle status as this component may be subject to availability constraints or obsolescence notices. Ensure compatibility with existing thermal management solutions given the high power density requirements. Validate that the intended application falls within the specified frequency range and voltage limits defined in the datasheet.

Selection Notes

Select this component for designs requiring high linearity and efficiency in dual-band GSM/EDGE environments. Consider the internal matching network which reduces external component count but requires adherence to specific impedance values. Evaluate thermal resistance characteristics to ensure adequate heat dissipation for continuous wave operations. Verify that the package style aligns with the PCB layout capabilities and assembly processes available.

Part Context

This part belongs to the MRF8S series of RF power transistors manufactured by Freescale Semiconductor, now NXP USA Inc. These devices are widely utilized in telecommunications infrastructure due to their robust performance in cellular bands. The NI-780S package provides a standardized footprint for mounting on printed circuit boards, facilitating integration into base station hardware platforms.

Replacement Considerations

MRF8S18120HR3

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is -0.5 to +65 Vdc.

Does the device include internal matching networks?

Yes, the MRF8S18120HSR5 is internally matched on both the input and output ports.

What is the typical gain at 1840 MHz under CW conditions?

The typical power gain (Gps) at 1840 MHz with 72 Watts CW output is 18.6 dB.