MRF8S18210WGHSR3

Overview

The MRF8S18210WGHSR3 is an N-channel RF MOSFET manufactured by NXP USA Inc. It operates at a frequency of 1.93GHz with a gain of 17.8dB. The device features a 30V test voltage and a 65V rated voltage, supporting a test current of 1.3A. It delivers 50W output power and utilizes the NI-880XS-2 GULL surface mount package.

Feature Summary

• N-channel metal oxide semiconductor field effect transistor technology
• Surface mount installation type for automated assembly
• Designed for radio frequency power amplification applications

Applications

• Radio frequency power amplification
• Cellular infrastructure equipment
• Broadband wireless access systems

Procurement Notes

Verify component authenticity through authorized NXP distributors or certified suppliers. Confirm the specific NI-880XS-2 GULL packaging matches design requirements. Check datasheet revisions for electrical parameter updates. Ensure compliance with RoHS directives as indicated in official documentation. Validate part number suffixes against manufacturer standards to avoid counterfeit risks.

Selection Notes

Select this component for designs requiring 50W output power at 1.93GHz. Consider the 65V rated voltage for system headroom. Evaluate thermal management needs due to high power density. Verify compatibility with NI-880XS-2 GULL footprints. Assess suitability for cellular base station architectures requiring high linearity.

Part Context

This device belongs to the MRF8S series of RF power transistors from NXP. It represents silicon LDMOS technology optimized for infrastructure markets. The product supports macro remote radio head and active antenna system deployments. It complements NXP's broader portfolio of RF solutions for 5G and LTE networks.

Replacement Considerations

MRF8S18210WHS is a related variant within the same family. Verify pinout and thermal characteristics before substitution. Consult official cross-reference guides for functional equivalence confirmation.