MRF8S18210WGHSR5

Overview

The MRF8S18210WGHSR5 is an N-channel RF MOSFET from the HV8 series, designed for high-power applications. It operates at a drain-source voltage of 30 V and delivers 55 W of output power at 1.8 GHz. The device utilizes the NI-880XS surface-mount package to facilitate integration into compact RF circuits.

Feature Summary

• High-efficiency RF power amplification in the 1.8 GHz band
• Robust 30 V drain-source voltage rating
• Integrated thermal management via NI-880XS package

Applications

• Base station power amplifiers
• Broadband RF transmitters
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify the specific suffix 'WGHSR5' against official NXP documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the component matches the NI-880XS footprint requirements for your PCB layout before finalizing procurement orders.

Selection Notes

Select this component when designing for the 1.8 GHz frequency range requiring 55 W output power. The 30 V rating suits standard base station supply voltages. Consider the NI-880XS package size for thermal dissipation needs and board space constraints compared to other HV8 series alternatives.

Part Context

This part belongs to the MRF8S family of RF power MOSFETs. These devices are engineered for linear and non-linear RF power amplifier applications. The HV8 technology node provides improved gain and efficiency characteristics suitable for modern communication infrastructure.

Replacement Considerations

Check NXP datasheets for direct pin-compatible substitutes within the MRF8S series. Verify that any alternative maintains the 30 V rating and 1.8 GHz performance specifications.