MRF8S18210WHSR5

Overview

The MRF8S18210WHSR5 is an N-channel RF MOSFET from the HV8 series, designed for high-power radio frequency applications. It operates at a test voltage of 30 V and a test current of 1.3 A. The device delivers 50 W of output power with a gain of 17.8 dB at a frequency of 1.93 GHz. It features a maximum rated voltage of 65 V and utilizes the NI-880XS surface-mount package.

Feature Summary

• High-efficiency RF power amplification in the HV8 series
• Surface-mount NI-880XS package design
• N-channel MOSFET technology

Applications

• Radio frequency power amplification
• Wireless communication systems
• Broadband RF transmitter stages

Procurement Notes

Verify component authenticity through authorized NXP distributors or direct manufacturer channels. Confirm RoHS3 compliance and EAR99 classification during sourcing. Check for discontinued status indicators as availability may be limited. Ensure packaging matches the reel specification for automated assembly processes.

Selection Notes

Select this component for designs requiring 50 W output at approximately 1.93 GHz. The 65 V rating provides headroom for standard 28 V or 30 V supply rails. Consider thermal management requirements associated with the NI-880XS package for high-power density implementations.

Part Context

This part belongs to the MRF8 family of RF power transistors manufactured by NXP USA Inc. It is related to variants such as MRF8S18210WHS and MRF8S18210WHSR3, which share similar functional characteristics within the HV8 series portfolio for RF power applications.

Replacement Considerations

Cross-reference with MRF8S18210WHSR3 for potential substitution. Verify pinout compatibility and electrical parameter alignment before replacing the original component in existing circuit designs.