MRF8S18260HSR6

MRF8S18260HSR6

$125.79
  • Description:RF MOSFET LDMOS 30V NI1230
  • Series:-

SKU:5aa0689e76f7 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V NI1230
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.88GHz
  • Gain:17.9dB
  • Voltage - Test:30 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:1.6 A
  • Power - Output:74W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-1230S-4S4S
  • Supplier Device Package:NI-1230S-4S4S
  • Configuration:-

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MRF8S18260HSR6

Overview

The MRF8S18260HSR6 is an RF LDMOS power transistor from Freescale Semiconductor, designed for high-output applications in the 1800 and 1900 MHz bands. It serves as a core component in multi-carrier power amplifiers (MCPAs) for wireless base station transceivers. The device delivers ultra-high output levels required for Doherty-type amplifier architectures, enabling service providers to increase coverage and capacity without dedicating separate amplifiers per carrier.

Feature Summary

  • Engineered for Doherty-type multi-carrier power amplifier (MCPA) configurations
  • Optimized for operation within the 1800 and 1900 MHz frequency bands
  • Delivers high output power levels suitable for wireless base station transceivers

Applications

  • Wireless base station transceivers
  • Multi-carrier power amplifiers (MCPAs)
  • Doherty-type power amplifier architectures

Procurement Notes

Verify the specific suffix 'SR6' against official NXP/Freescale documentation to confirm tape-and-reel packaging and exact electrical tolerances. Ensure the source document explicitly identifies this part number within the MRF8S18260H/S family to avoid confusion with similar variants. Cross-reference the manufacturer's current product status to confirm availability and lifecycle stage before procurement.

Selection Notes

Select this component when designing base station transceivers requiring high-efficiency amplification for multiple carriers in the 1800/1900 MHz spectrum. It is appropriate for systems utilizing Doherty topology to reduce size and component count compared to single-amplifier-per-carrier solutions. Verify thermal management requirements align with the device's high-output power capabilities.

Part Context

This transistor belongs to Freescale Semiconductor's RF LDMOS power transistor portfolio, specifically engineered for commercial wireless infrastructure. It represents a solution for increasing base station capacity without proportional increases in hardware footprint. The MRF8S18260H/S series provides industry-leading output levels for its designated frequency bands.

Replacement Considerations

Official substitutes include other members of the MRF8S18260H/S family, such as the MRF8P18265H/S or MRF8S19260H/S, provided they meet the specific frequency and power requirements of the design. Verify pinout compatibility and electrical specifications against the original schematic before substitution.

MRF8S18260HSR6MRF8S18260HSR6
$125.79
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