MRF8S19140HR3

Overview

The MRF8S19140HR3 is an LDMOS RF power transistor designed for base station applications. It operates within the frequency range of 1930 to 1990 MHz, supporting CDMA, W-CDMA, and LTE standards. The device features a test voltage of 28 V and delivers a gain of 19.1 dB at 1.96 GHz. It utilizes an NI780H package and is suitable for Class AB and Class C amplifier configurations.

Feature Summary

• Engineered for multi-standard cellular base station infrastructure
• Optimized for linear amplification in Class AB and Class C modes
• Constructed with LDMOS technology for high reliability

Applications

• CDMA base station power amplifiers
• W-CDMA base station power amplifiers
• LTE base station power amplifiers

Procurement Notes

Verify the component against official NXP datasheets to confirm specifications such as the 28 V test voltage and 19.1 dB gain. Ensure the NI780H package matches system requirements. Confirm RoHS compliance status and check for obsolescence notices, as availability may vary across distributors.

Selection Notes

Select this component for applications requiring operation between 1930 and 1990 MHz. Consider its suitability for Class AB and Class C topologies. Evaluate thermal management needs given the operating junction temperature limits. Compare performance metrics like gain and voltage against alternative LDMOS devices for specific design constraints.

Part Context

This part belongs to NXP's MRF series of RF power transistors. These components are widely used in wireless communication infrastructure. The MRF8S19140HR3 specifically targets frequencies around 1.96 GHz, serving as a key element in modern cellular network hardware.

Replacement Considerations

Consult NXP documentation for direct substitutes. Verify pinout compatibility and electrical parameters before swapping. Check for updated series replacements that may offer improved performance or availability.