MRF8S21100HR3

Overview

The MRF8S21100HR3 is an RF LDMOS power transistor manufactured by NXP USA Inc. Designed for base station applications, it operates within the 2110-2170 MHz frequency range. The device delivers a typical average output power of 48 W when powered at 28 V. It utilizes the NI-780H-2L package and features a drain voltage rating of 65 V with a test current of 850 mA. This component is part of the MRF8 series and is currently marked as obsolete.

Feature Summary

• Utilizes Lateral Diffused Metal Oxide Semiconductor (LDMOS) technology for high linearity and efficiency in RF amplification.
• Engineered specifically for wireless communication base station architectures requiring robust S-band performance.
• Designed for board mounting to facilitate integration into compact radio frequency front-end modules.

Applications

• Doherty power amplifier stages for wireless communication base stations
• S-band RF power amplification in cellular infrastructure
• High-efficiency linear amplification for wideband signal processing

Procurement Notes

Verify component obsolescence status prior to design finalization. Confirm package compatibility with existing thermal management solutions. Ensure supply chain availability through authorized distributors or secondary markets due to end-of-life classification. Review datasheet revisions for any parameter drift compared to legacy equivalents.

Selection Notes

Select this component for designs requiring 48 W average output power at 28 V in the 2110-2170 MHz band. Consider the NI-780H-2L package constraints for PCB layout and thermal dissipation. Evaluate gain requirements against the typical specifications provided in official documentation. Assess system-level efficiency targets relative to Doherty architecture implementations.

Part Context

This transistor belongs to the MRF8 family of RF power devices from NXP, optimized for base station transmitter applications. It complements other S-band components like the MRF7S21080H in asymmetric power input configurations. The series supports high-efficiency operation critical for modern cellular network infrastructure energy consumption standards.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Designers should consult NXP technical support for direct replacements or evaluate the MRF8S21120HR3 for higher power variants if system headroom permits.