MRF8S21100HR5

Overview

The MRF8S21100HR5 is an RF MOSFET utilizing LDMOS technology, designed for base station applications. It operates at a test voltage of 28 V with a rated voltage of 65 V. The device delivers 24 W of output power at 2.17 GHz, featuring a gain of 18.3 dB and a test current of 700 mA. Packaged in the NI-780H-2L format (SOT-957A), it supports frequencies from 2110 to 2170 MHz.

Feature Summary

• Utilizes LDMOS technology for high-frequency RF performance
• Optimized for Class AB and Class C amplifier operations
• Designed specifically for W-CDMA and LTE base station architectures

Applications

• W-CDMA base station power amplification
• LTE base station signal processing
• Class AB linear RF amplification stages
• Class C non-linear RF amplification stages

Procurement Notes

Verify component authenticity through authorized NXP channels due to obsolete status. Confirm package integrity for the NI-780H-2L form factor. Ensure compliance with RoHS3 specifications as documented. Cross-reference datasheet revisions for any parameter updates prior to integration into final designs.

Selection Notes

Select this component for 2110–2170 MHz base station deployments requiring 24 W output. Consider thermal management for the SOT-957A package. Evaluate bias requirements for 28 V operation. Compare gain characteristics against system linearity needs. Assess availability constraints given the obsolete product classification.

Part Context

Part of the MRF8 series, this LDMOS FET targets cellular infrastructure. It complements lower-power variants within the family. The NI-780H-2L package facilitates board-level integration. Designed by NXP USA Inc., it addresses specific frequency band requirements for modern wireless standards.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. The product status is listed as obsolete. Designers should consult official NXP resources for lifecycle management or direct replacements.