MRF8S21100HSR3

Overview

The MRF8S21100HSR3 is an L-band RF power transistor manufactured by Freescale Semiconductor. It utilizes LDMOS technology and operates at a frequency of 2.1 GHz. The device delivers an output power of 100 W with a gain of 17 dB when tested at a drain voltage of 28 V. It features a maximum drain-source breakdown voltage of 65 V and is housed in the NI-780HS package.

Feature Summary

• LDMOS construction for high reliability
• High power density design
• RoHS compliant manufacturing

Applications

• Base station amplifiers
• Broadband communication systems
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify the manufacturer status as the component may be obsolete or discontinued. Confirm the specific suffix 'HSR3' matches the reel packaging requirement. Check for RoHS compliance documentation to ensure regulatory adherence. Validate the NI-780HS package dimensions against the target board layout before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring high output power in the L-band spectrum. Ensure the thermal management system supports the heat dissipation requirements of a 100 W device. Verify that the driving circuitry can provide sufficient gain to achieve the specified 17 dB performance level at 28 V operation.

Part Context

This part belongs to the MRF8 series of RF power transistors designed for demanding wireless infrastructure applications. The series is characterized by robust LDMOS technology optimized for linearity and efficiency in broadband environments.