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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：LDMOS
- Frequency：2.17GHz
- Gain：17.6dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：850 mA
- Power - Output：28W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：NI-780S
- Supplier Device Package：NI-780S
- Configuration：-
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Overview
The MRF8S21120HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for W-CDMA and LTE base station applications operating between 2110 MHz and 2170 MHz. It supports Class AB and Class C modulation formats with a drain-source voltage of 65 Vdc and gate-source voltage range of -6.0 to +10 Vdc. The device delivers 28 Watts average output power at 2140 MHz with 34% drain efficiency. It features internal input and output matching, integrated ESD protection, and RoHS compliance.
Feature Summary
- Internally matched for ease of use
- Integrated ESD protection
- Optimized for Doherty applications
Applications
- W-CDMA base station amplifiers
- LTE base station amplifiers
- Class AB cellular amplifier stages
- Class C amplifier stages
Procurement Notes
Verify the datasheet revision and manufacturer documentation before integration. Confirm that the NI-780S package dimensions align with the PCB footprint. Ensure thermal management meets the junction-to-case resistance requirements specified in the official data sheet.
Selection Notes
Select this component for broadband cellular infrastructure requiring high linearity and gain flatness across the 2110–2170 MHz band. Consider its optimized performance for Doherty architectures and digital predistortion systems when designing multi-carrier amplifier stages.
Part Context
This lateral N-channel RF power MOSFET belongs to the Freescale Semiconductor MRF8S series. It is specifically engineered for wireless communication base stations, providing robust performance in high-power amplifier configurations while maintaining thermal stability under continuous wave operation.
Replacement Considerations
MRF8S21120HR3
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 225 °C.
Does the device include internal matching networks?
Yes, the MRF8S21120HSR3 is internally matched on both the input and output for ease of use.
Is the device suitable for Doherty amplifier designs?
Yes, the device is explicitly optimized for Doherty applications.
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