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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：2.14GHz
- Gain：17.9dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：970 mA
- Power - Output：34W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-780S
- Supplier Device Package：NI-780S
- Configuration：-
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Overview
The MRF8S21140HSR3 is an LDMOS RF power MOSFET manufactured by NXP USA Inc. It operates within the 2110-2170 MHz frequency range, supporting W-CDMA and LTE applications. The device delivers 34 W of average output power at a test voltage of 28 V. Key electrical parameters include a drain current of 970 mA, a gain of 17.9 dB, and a maximum rated voltage of 65 V. The component utilizes the NI-780S package and is supplied in tape and reel packaging.
Feature Summary
- Lateral N-channel RF power MOSFET technology
- Optimized for W-CDMA and LTE wireless communication standards
- High average output power capability
Applications
- W-CDMA base station amplification
- LTE base station signal processing
- General RF power amplification
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific suffix matches the required NI-780S package variant. Check for RoHS compliance status and ensure storage conditions adhere to the specified moisture sensitivity level. Validate that the obsolete status does not impact long-term supply chain requirements.
Selection Notes
Select this component for applications requiring high linearity and efficiency in the 2110-2170 MHz band. Ensure the design supports the 28 V operating voltage and accommodates the thermal requirements of the NI-780S package. Consider the 17.9 dB gain when designing matching networks. Verify compatibility with existing board layouts due to the specific footprint dimensions.
Part Context
This part belongs to the MRF8 series of lateral DMOS transistors designed for cellular infrastructure. It complements other variants in the family by offering specific power and frequency characteristics tailored for modern broadband standards. The NI-780S package provides robust thermal performance for high-power density applications.
Replacement Considerations
No public confirmed substitute part numbers are available. The product status is listed as obsolete. Engineers should consult NXP directly for potential end-of-life alternatives or next-generation replacements suitable for W-CDMA and LTE bands.
