MRF8S21200HR6

Overview

The MRF8S21200HR6 is an N-Channel Enhancement-Mode Lateral MOSFET designed for W-CDMA and LTE base station applications operating between 2110 MHz and 2170 MHz. It supports Class AB and Class C modulation formats with a drain-source voltage of 65 Vdc and an operating voltage of 32 Vdc. Typical single-carrier W-CDMA performance at 2140 MHz yields 48 Watts average output power, 18.1 dB gain, and 32.6% drain efficiency under 28 Volts and 1400 mA quiescent current conditions.

Feature Summary

• Internally matched input and output networks to simplify circuit design
• Integrated electrostatic discharge protection mechanisms
• Extended negative gate-source voltage range optimized for Class C operation
• Designed specifically for digital predistortion error correction systems

Applications

• W-CDMA cellular base station amplifiers
• LTE cellular base station amplifiers
• Digital predistortion linearization modules

Procurement Notes

Verify the specific suffix configuration against the official datasheet before procurement. The R6 suffix indicates a tape and reel packaging format containing 150 units on a 56 mm reel. Confirm that the component status aligns with current manufacturing availability as product lifecycles may change without notice.

Selection Notes

Select this device for wideband cellular infrastructure requiring high linearity and ruggedness. Ensure the thermal management system can handle the junction-to-case thermal resistance characteristics. Validate impedance matching networks using the provided series equivalent large-signal impedance parameters for optimal broadband performance across the specified frequency range.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF8S family developed by Freescale Semiconductor. It utilizes a Case 375D-05 package style (NI-1230) designed for surface mount applications in high-power radio frequency environments. The technology focuses on providing robust performance for modern digital cellular communication standards.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical specifications, package dimensions, and thermal characteristics to ensure functional compatibility in existing designs.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage rating is +65 Vdc.

Does the device support internal matching?

Yes, the MRF8S21200HR6 features internally matched input and output networks for ease of use.

What is the typical power gain at 2140 MHz?

The typical power gain at 2140 MHz is 18.1 dB under standard test conditions.