MRF8S23120HR5

Overview

The MRF8S23120HR5 is an N-channel LDMOS RF power transistor designed for high-frequency applications. It operates at a frequency of 2.3 GHz with a rated voltage of 28 V and a breakdown voltage of 65 V. The device delivers an output power of 28 W with a gain of 16 dB, tested at a current of 800 mA. It utilizes the NI-780H-2L package, which is a ceramic flatpack configuration suitable for robust RF performance.

Feature Summary

• N-channel LDMOS construction for enhanced RF power handling
• Internal impedance matching to simplify circuit design
• Robust ceramic flatpack packaging for thermal stability

Applications

• GSM EDGE wireless network amplifiers
• Broadband RF power amplification
• Base station transmitter modules

Procurement Notes

Verify the specific datasheet version from NXP Semiconductors or authorized distributors to confirm pinout compatibility and thermal characteristics. Ensure the NI-780H-2L package matches your PCB footprint requirements. Cross-reference RoHS compliance status if environmental regulations apply to your manufacturing process.

Selection Notes

Select this component for applications requiring 28 W output at 2.3 GHz. Consider the 28 V operating voltage and 65 V breakdown limit when designing bias circuits. The internal matching reduces external component count, making it suitable for compact amplifier designs where space efficiency is critical.

Part Context

This part belongs to the Freescale (now NXP) MRF8S series of RF power transistors. These devices are engineered for GSM and EDGE infrastructure, combining high linearity with efficient power conversion. The series includes variants optimized for different frequency bands within the cellular communication spectrum.

Replacement Considerations

Check for direct substitutes within the MRF8S family that match the 28 W output and 2.3 GHz frequency. Verify package compatibility with the NI-780H-2L form factor before substitution.