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The MRF8S7120NR3 is an LDMOS RF power transistor manufactured by NXP USA Inc., designed for cellular base station applications. It operates within the 728 to 768 MHz frequency range, specifically targeting CDMA systems. The device delivers a typical average output power of 32 W at a test voltage of 28 V. Key electrical parameters include a gain of 19.2 dB and a drain current of 600 mA. It utilizes the OM-780-2 surface-mount package and supports AB and C class modulation formats.
Verify component authenticity through authorized NXP channels due to obsolete status. Confirm package integrity and pin alignment against OM-780-2 specifications. Validate datasheet revisions for updated thermal and electrical limits before integration into legacy designs.
Select this component for legacy CDMA systems requiring 32 W output in the 728-768 MHz band. Ensure bias circuits support 28 V operation and 600 mA current draw. Consider thermal management requirements inherent to the OM-780-2 surface mount form factor for reliable long-term performance.
This part belongs to NXP's MRF series of RF power transistors, widely used in wireless communication infrastructure. The MRF8S7120NR3 variant specifically addresses mid-band CDMA requirements, offering a balance of linearity and power density suitable for macrocell and microcell base station deployments.
The MRF8S9120NR3 is a documented substitute within the same family, though it operates at 960 MHz with 33 W output. Verify frequency compatibility and thermal interface matching when substituting, as pinouts may differ despite similar packaging.