MRF8S7170NR3

Overview

The MRF8S7170NR3 is a lateral N-channel RF power MOSFET designed for base station applications in the 728 to 768 MHz frequency range. It delivers 50 W average output power at 28 V bias voltage. The device features a gain of 19.5 dB and operates within a maximum drain-source voltage of 70 V. Packaged in the OM-780-2 format, it supports AB and C class modulation formats typical of cellular networks.

Feature Summary

• Single lateral N-channel RF power MOSFET technology
• Optimized for 728–768 MHz cellular base station frequencies
• Supports AB and C class modulation formats

Applications

• W-CDMA base station power amplifiers
• Cellular network infrastructure transmitters
• Broadband RF power amplification

Procurement Notes

Verify component authenticity through authorized NXP channels. Confirm package integrity upon receipt. Check datasheet revisions for electrical parameter updates. Ensure storage conditions meet moisture sensitivity requirements. Validate pin compatibility with existing board layouts before integration.

Selection Notes

Select this component for high-power linear amplification in the 700 MHz band. Evaluate thermal management capabilities for continuous 50 W operation. Consider impedance matching networks for optimal gain performance. Assess bias stability requirements for AB or C class configurations.

Part Context

This part belongs to NXP’s LDMOS family optimized for wireless infrastructure. It replaces older generations of RF transistors with improved linearity and efficiency. The OM-780-2 package provides robust thermal dissipation for high-power density applications.

Replacement Considerations

Consult official substitution lists for direct replacements. Verify pinout and thermal characteristics match. Ensure frequency coverage remains compatible with target design.