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The MRF8S9100HR5 is an N-channel enhancement-mode lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 865 MHz and 960 MHz. It supports Class AB and Class C modulation formats with a drain-source voltage of 70 Vdc and an operating voltage up to 32 Vdc. Typical performance at 28 Vdc includes 72 W CW output power with 19.3 dB gain and 51.6% efficiency at 920 MHz, or 45 W average power for GSM EDGE. The device features internal input matching, integrated ESD protection, and is supplied in tape and reel packaging.
Verify the exact part number suffix against official documentation, as variations such as HR3 or HSR3 indicate specific packaging configurations like tape and reel quantities. Confirm RoHS compliance status and current lifecycle stage through authorized distributors or manufacturer channels before procurement.
Select this component for designs requiring high linearity and efficiency in the 865-960 MHz band. Ensure thermal management accommodates junction temperatures up to 225°C and case temperatures up to 150°C. Verify bias conditions align with typical Class AB or C operation requirements for optimal gain and efficiency.
This RF power transistor belongs to the LDMOS family from Freescale Semiconductor, now NXP USA Inc. It is engineered specifically for wireless communication infrastructure, providing robust performance in demanding cellular network environments while maintaining reliability under continuous wave and modulated signal conditions.
Consult official substitution guides for equivalent devices within the same frequency range and power class. Verify pinout compatibility and thermal characteristics when considering alternatives.