MRF8S9100HSR3

Overview

The MRF8S9100HSR3 is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for GSM and GSM EDGE base station applications operating between 865 MHz and 960 MHz. It supports Class AB and Class C modulation formats with a typical CW output power of 72 Watts at 28 Volts drain supply. The device features internal input matching, integrated ESD protection, and RoHS compliance. It utilizes the NI-780S package (Case 465A-06) and is supplied in tape and reel packaging.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Greater negative gate-source voltage range for improved Class C operation

Applications

• GSM base stations
• GSM EDGE base stations

Procurement Notes

Verify the specific suffix 'SR3' to confirm tape and reel packaging containing 250 units per 56 mm reel. Ensure the component matches the Case 465A-06 physical dimensions and style designation. Confirm that the ordering information aligns with the manufacturer's current product documentation to avoid discrepancies in package or quantity specifications.

Selection Notes

Select this component for cellular base station designs requiring high linearity and efficiency in the 865 to 960 MHz band. Consider its capability to handle 10:1 VSWR and its thermal characteristics when designing heat dissipation solutions. Validate performance parameters against specific system requirements for gain flatness and intermodulation distortion.

Part Context

This part belongs to Freescale Semiconductor's lateral N-channel RF power MOSFET family. It is specifically engineered for wireless communication infrastructure, providing robust performance for wideband cellular applications. The device integrates necessary impedance matching to simplify circuit design while maintaining high power density and reliability under continuous wave and modulated signal conditions.

Replacement Considerations

MRF8S9100HR3