MRF8S9100HSR5

Overview

The MRF8S9100HSR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 865 MHz and 960 MHz. It supports Class AB and Class C modulation formats with a drain-source voltage of 70 Vdc and an operating voltage up to 32 Vdc. The device delivers 72 Watts CW output power at 28 Vdc with 500 mA quiescent current, achieving typical drain efficiencies exceeding 54% at 960 MHz. It features internal input matching, integrated ESD protection, and RoHS compliance.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Greater negative gate-source voltage range for improved Class C operation

Applications

• GSM base stations
• GSM EDGE base stations

Procurement Notes

Verify the exact datasheet revision and manufacturer origin (NXP vs Freescale) as the component was originally released by Freescale Semiconductor before acquisition. Confirm that the SR5 suffix corresponds to the specific reel packaging requirements for your assembly line. Ensure compatibility with the NI-780 package thermal management specifications during integration.

Selection Notes

Select this component for cellular infrastructure requiring high linearity and efficiency in the 865–960 MHz band. Evaluate thermal resistance characteristics against your heatsink design to maintain junction temperatures within limits. Consider the internal matching network when designing the output impedance transformation circuitry for optimal power transfer.

Part Context

This part belongs to the MRF8S9100H series of RF power lateral N-channel MOSFETs. It is functionally similar to the MRF8S9100HR3 variant but differs in packaging configuration. The device utilizes the NI-780 case style, providing a standardized footprint for mounting on printed circuit boards used in telecommunications equipment.

Replacement Considerations

MRF8S9100HR3