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The MRF8S9102NR3 is an NXP Semiconductors RF MOSFET transistor designed for cellular base station applications. It operates within the 865 MHz to 960 MHz frequency range, utilizing Silicon technology in an OM-780-2 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 70 V and a gate-source threshold voltage of 2.3 V. The device delivers an output power of 28 W with a gain of 22.8 dB at a maximum operating temperature of +150 C.
Verify component authenticity through authorized NXP channels due to discontinued status. Confirm datasheet revisions and historical performance data before integration. Ensure supply chain integrity as availability is limited. Validate RoHS compliance documentation for regulatory adherence. Cross-reference part numbers carefully to avoid substitution errors.
Evaluate thermal management requirements given the 150 C maximum junction temperature limit. Consider the OM-780-2 package constraints for PCB layout and heat dissipation. Assess compatibility with existing base station architectures supporting 28 V operation. Verify that the 28 W output power meets specific coverage and capacity targets for the intended deployment scenario.
This component belongs to the MRF8S9102N series of lateral N-channel RF power MOSFETs. It is engineered specifically for wireless communication infrastructure, providing reliable performance in demanding cellular environments. The series represents NXP's focus on robust, high-efficiency solutions for mobile network base stations.
Public confirmed substitute part numbers are not available in the provided documentation. Due to the discontinued status, direct replacements may require design modifications or alternative component families from NXP or other manufacturers.