MRF8S9102NR3

MRF8S9102NR3

  • Description:RF MOSFET LDMOS 28V OM780-2
  • Series:-

SKU:195ebdd9c045 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V OM780-2
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:920MHz
  • Gain:23.1dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:750 mA
  • Power - Output:28W
  • Voltage - Rated:70 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:OM-780-2
  • Supplier Device Package:OM-780-2
  • Configuration:-

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MRF8S9102NR3

Overview

The MRF8S9102NR3 is an NXP Semiconductors RF MOSFET transistor designed for cellular base station applications. It operates within the 865 MHz to 960 MHz frequency range, utilizing Silicon technology in an OM-780-2 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 70 V and a gate-source threshold voltage of 2.3 V. The device delivers an output power of 28 W with a gain of 22.8 dB at a maximum operating temperature of +150 C.

Feature Summary

  • Designed for CDMA base station applications across 865–960 MHz
  • Capable of operation in Class AB and Class C modulation formats
  • Enhanced ruggedness with high VSWR handling capability

Applications

  • CDMA base station power amplification
  • Cellular infrastructure signal processing
  • Single-carrier W-CDMA transmission systems

Procurement Notes

Verify component authenticity through authorized NXP channels due to discontinued status. Confirm datasheet revisions and historical performance data before integration. Ensure supply chain integrity as availability is limited. Validate RoHS compliance documentation for regulatory adherence. Cross-reference part numbers carefully to avoid substitution errors.

Selection Notes

Evaluate thermal management requirements given the 150 C maximum junction temperature limit. Consider the OM-780-2 package constraints for PCB layout and heat dissipation. Assess compatibility with existing base station architectures supporting 28 V operation. Verify that the 28 W output power meets specific coverage and capacity targets for the intended deployment scenario.

Part Context

This component belongs to the MRF8S9102N series of lateral N-channel RF power MOSFETs. It is engineered specifically for wireless communication infrastructure, providing reliable performance in demanding cellular environments. The series represents NXP's focus on robust, high-efficiency solutions for mobile network base stations.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the discontinued status, direct replacements may require design modifications or alternative component families from NXP or other manufacturers.

MRF8S9102NR3MRF8S9102NR3

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