MRF8S9200NR3

Overview

The MRF8S9200NR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications in the 920 to 960 MHz frequency range. It supports Class AB and Class C operation for cellular modulation formats. Typical single-carrier W-CDMA performance at 28 V, 1400 mA quiescent current, and 58 Watts average output power yields a gain of 19.9 dB and drain efficiency of 37.1% at 940 MHz. The device handles 10:1 VSWR with 300 Watts CW output at 32 Vdc and features a 225°C capable plastic package.

Feature Summary

• Optimized for Doherty applications and digital predistortion error correction systems
• Internally matched input and output networks for ease of use
• Integrated ESD protection with enhanced ruggedness capabilities
• Greater negative gate-source voltage range for improved Class C operation

Applications

• CDMA base station applications
• Class AB cellular base station modulation formats
• Class C cellular base station modulation formats
• Doherty amplifier configurations

Procurement Notes

Verify component authenticity through authorized channels as this part was originally manufactured by Freescale Semiconductor, now NXP Semiconductors. Confirm RoHS compliance status and check for moisture sensitivity level 3 requirements during storage and handling. Ensure proper thermal management solutions are integrated given the high junction temperature capability and power dissipation characteristics specified in the datasheet.

Selection Notes

Select this component for wideband cellular infrastructure requiring high linearity and efficiency. The internal matching simplifies circuit design compared to discrete alternatives. Evaluate thermal resistance values carefully for heat sink design. Consider the specific operating voltage and current requirements for your target modulation format when designing bias networks.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF8S series optimized for wireless communication infrastructure. It utilizes silicon technology housed in an OM-780-2 plastic package. The device represents a transition from Freescale Semiconductor branding to NXP Semiconductors following corporate restructuring.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum junction temperature capability?

The device is capable of operating at a junction temperature up to 225°C.

How does the device handle voltage standing wave ratio (VSWR)?

It is capable of handling 10:1 VSWR at 32 Vdc, 940 MHz, delivering 300 Watts CW output power with 3 dB input overdrive from rated power.

Is the device internally matched?

Yes, the MRF8S9200NR3 is internally matched both on the input and output sides.