MRF8S9202NR3

Overview

The MRF8S9202NR3 is an RF power field-effect transistor manufactured by Freescale Semiconductor, utilizing LDMOS technology. Designed for high-frequency applications, this component operates at a center frequency of 920MHz. It features a test voltage of 28V and delivers a gain of 19dB with an output power capability of 58W. The device is housed in the OM-780-2 surface-mount package and is currently listed as an active product. This specification sheet outlines its electrical characteristics suitable for RF power amplification tasks within the ultra-high frequency band.

Feature Summary

• Utilizes LDMOS technology for robust RF power performance
• Optimized for operation at 920MHz with 19dB gain
• Designed for surface-mount integration via OM-780-2 package

Applications

• RF power amplification in communication systems
• Ultra-high frequency band signal processing
• Base station transmitter modules

Procurement Notes

Verify the specific datasheet version from Freescale Semiconductor to ensure compatibility with current design requirements. Confirm that the OM-780-2 package dimensions align with your PCB layout constraints. Check for any recent updates regarding RoHS compliance status or lead-free specifications directly from the manufacturer's official documentation before finalizing procurement decisions.

Selection Notes

Select this component when designing circuits requiring 58W output power at 920MHz. Ensure the thermal management solution supports the power dissipation associated with LDMOS devices. Verify that the 28V operating voltage matches the system's power supply capabilities. Consider the surface-mount form factor for automated assembly processes and space-constrained board designs.

Part Context

This part belongs to the MRF8S series of RF power FETs from Freescale Semiconductor. These components are engineered for demanding RF applications where high linearity and power efficiency are critical. The series typically includes variants optimized for different frequency bands and power levels, serving as key building blocks in modern wireless infrastructure and broadcast equipment.

Replacement Considerations

Consult official cross-reference guides for direct substitutes. Ensure any replacement maintains the same OM-780-2 footprint and 28V rating. Verify that alternative LDMOS devices offer comparable 19dB gain and 58W output at 920MHz to avoid redesigning matching networks.