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The MRF8S9220HR3 is a lateral N-channel RF power MOSFET manufactured by NXP USA Inc. It operates in the 920 to 960 MHz frequency range with an average output power of 65 W at 28 V. The device utilizes LDMOS technology and features a NI-780S package for baseboard mounting. It is designed for cellular base station applications, supporting Class AB and Class C modulation formats.
This component is archived and no longer manufactured. Specifications are provided for historical reference only. Verify current availability through authorized distributors or check for discontinued part status before design integration. Ensure compliance with end-of-life management protocols for existing systems.
Select this component for legacy 900 MHz CDMA base station designs requiring 65 W average output power. Consider the NI-780S package constraints and thermal management requirements. Evaluate compatibility with 28 V supply rails and verify that the 19.4 dB gain meets system link budget requirements without additional pre-amplification.
Part of the MRF8S9 series of lateral N-channel RF power MOSFETs from NXP Semiconductors. This series targets wireless communication infrastructure, specifically focusing on wideband code division multiple access (W-CDMA) applications. The MRF8S9220H variant represents a higher power option compared to lower-wattage siblings in the same family.
MRF8S9220HSR3
The device is capable of handling 317 Watts CW output power at 940 MHz with a 10:1 VSWR when subjected to 3 dB input overdrive from the rated Pout.
At 940 MHz, with 65 Watts average output power and 7.5 dB input signal PAR, the Adjacent Channel Power Ratio (ACPR) is typically -37.5 dBc.
No, the MRF8S9220HR3 uses the NI-780S package, which is designed for baseboard mounting rather than direct surface mount installation.