MRF8S9220HR3

MRF8S9220HR3

  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-

SKU:8b12d4f99862 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:960MHz
  • Gain:19.4dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.6 A
  • Power - Output:65W
  • Voltage - Rated:70 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-957A
  • Supplier Device Package:NI-780H-2L
  • Configuration:-

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MRF8S9220HR3

Overview

The MRF8S9220HR3 is a lateral N-channel RF power MOSFET manufactured by NXP USA Inc. It operates in the 920 to 960 MHz frequency range with an average output power of 65 W at 28 V. The device utilizes LDMOS technology and features a NI-780S package for baseboard mounting. It is designed for cellular base station applications, supporting Class AB and Class C modulation formats.

Feature Summary

  • Designed for CDMA base station applications within the 920 to 960 MHz band
  • Capable of handling high voltage standing wave ratio (VSWR) conditions for enhanced ruggedness
  • Supports typical cellular base station modulation formats in Class AB and Class C operation

Applications

  • CDMA base station power amplification
  • Single-carrier W-CDMA signal processing
  • Cellular infrastructure RF power stages

Procurement Notes

This component is archived and no longer manufactured. Specifications are provided for historical reference only. Verify current availability through authorized distributors or check for discontinued part status before design integration. Ensure compliance with end-of-life management protocols for existing systems.

Selection Notes

Select this component for legacy 900 MHz CDMA base station designs requiring 65 W average output power. Consider the NI-780S package constraints and thermal management requirements. Evaluate compatibility with 28 V supply rails and verify that the 19.4 dB gain meets system link budget requirements without additional pre-amplification.

Part Context

Part of the MRF8S9 series of lateral N-channel RF power MOSFETs from NXP Semiconductors. This series targets wireless communication infrastructure, specifically focusing on wideband code division multiple access (W-CDMA) applications. The MRF8S9220H variant represents a higher power option compared to lower-wattage siblings in the same family.

Replacement Considerations

MRF8S9220HSR3

FAQ

What is the maximum CW output power capability under overdrive conditions?

The device is capable of handling 317 Watts CW output power at 940 MHz with a 10:1 VSWR when subjected to 3 dB input overdrive from the rated Pout.

What is the typical ACPR performance at 940 MHz?

At 940 MHz, with 65 Watts average output power and 7.5 dB input signal PAR, the Adjacent Channel Power Ratio (ACPR) is typically -37.5 dBc.

Is this component suitable for surface mount assembly?

No, the MRF8S9220HR3 uses the NI-780S package, which is designed for baseboard mounting rather than direct surface mount installation.

MRF8S9220HR3MRF8S9220HR3

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