MRF8S9220HR5

Overview

The MRF8S9220HR5 is a lateral N-channel RF power MOSFET manufactured by NXP USA Inc. Designed for cellular base station applications, it operates within the 920 to 960 MHz frequency range. The device delivers an average output power of 65 W at 28 V. It utilizes the NI-780S surface-mount package and supports Class AB and Class C modulation formats typical for single-carrier W-CDMA systems.

Feature Summary

• Engineered for high ruggedness with enhanced capability to handle 10:1 VSWR conditions
• Optimized for CDMA base station architectures in the 920–960 MHz band
• Supports standard cellular modulation formats using Class AB and Class C operation

Applications

• Single-carrier W-CDMA base station power amplification
• Cellular infrastructure transmitter modules
• High-linearity RF power stages requiring robust load immunity

Procurement Notes

Verify component authenticity through authorized channels as this part may be discontinued or archived. Confirm package integrity and pin compatibility with existing NI-780S footprints. Review datasheet revisions for historical performance data since active manufacturing status may vary. Ensure design-in documentation matches the specific HR5 suffix requirements for tape-and-reel handling.

Selection Notes

Select this component when designing for 900 MHz cellular bands requiring 65 W average output. Compare gain and efficiency metrics against similar MRF8S series devices like the MRF8S9220HSR3. Evaluate thermal management needs for the NI-780S package under continuous wave loads. Consider VSWR tolerance if operating in harsh RF environments.

Part Context

This transistor belongs to the MRF8S family of lateral N-channel RF power MOSFETs from NXP Semiconductors. These devices are specifically engineered for wireless communication infrastructure. The MRF8S9220HR5 variant shares core electrical characteristics with other models in the series but differs in packaging and reel specifications.

Replacement Considerations

The MRF8S9220HSR3 serves as a verified functional substitute within the same product family. Both devices share identical electrical ratings and application profiles for 920–960 MHz operations.