MRF8S9260HSR3

Overview

The MRF8S9260HSR3 is an N-channel enhancement-mode lateral MOSFET designed for CDMA and multicarrier GSM base station applications operating between 865 MHz and 960 MHz. It supports Class AB and Class C modulation formats with a drain-source voltage of 70 Vdc and gate-source voltage range from -6.0 to +10 Vdc. The device delivers 75 Watts average output power at 960 MHz under single-carrier W-CDMA conditions, achieving up to 38.5% drain efficiency. It features internal input and output matching, integrated ESD protection, and optimized performance for Doherty amplifier configurations.

Feature Summary

• Internally matched input and output networks simplify circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Optimized specifically for Doherty amplifier applications
• Enhanced ruggedness capable of handling high VSWR conditions

Applications

• CDMA base station power amplification
• Multicarrier GSM base station power amplification
• Class AB cellular base station modulation formats
• Class C cellular base station modulation formats

Procurement Notes

Verify the specific package variant required, as the datasheet distinguishes between the NI-880S (SR3 suffix) and NI-880 (R3 suffix) packages. Confirm that the component meets all thermal management requirements specified in the maximum ratings table, particularly regarding junction temperature limits during continuous wave operation. Ensure compatibility with the intended test fixture impedance parameters provided in the electrical characteristics section.

Selection Notes

Select this component for wideband cellular infrastructure requiring high linearity and power density within the 865 to 960 MHz spectrum. Consider its suitability for Doherty architectures due to specific optimization data. Evaluate thermal resistance values against system cooling capabilities to maintain junction temperatures within safe operating limits during peak load conditions.

Part Context

This device belongs to the Freescale Semiconductor RF Power LDMOS family, later acquired by NXP. It serves as a high-power solution for wireless communication infrastructure, replacing earlier generations with improved ruggedness and efficiency metrics. The part number indicates the surface-mount reel packaging configuration.

Replacement Considerations

MRF8S9260HR3

FAQ

What is the typical drain efficiency at 960 MHz?

The typical drain efficiency is 38.5 percent when operating at 75 Watts average output power with a quiescent current of 1700 mA.

Does the device include external matching components?

Yes, the MRF8S9260HSR3 is internally matched on both the input and output ports to facilitate easier integration into 50-ohm systems.

What is the maximum operating junction temperature?

The maximum operating junction temperature is rated at 225 degrees Celsius according to the maximum ratings specifications.