ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET TO270
- Series：*
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：-
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Configuration：-
Download product information
Overview
The MRF9030GMR1 is an N-channel enhancement-mode lateral MOSFET from the RF Sub-Micron line, designed for broadband commercial and industrial applications up to 1.0 GHz. It operates at a typical drain voltage of 26 volts and delivers 30 watts PEP output power at 945 MHz with 19 dB gain and 41.5% efficiency. The device features integrated ESD protection, excellent thermal stability, and handles 10:1 VSWR. It is characterized by series equivalent large-signal impedance parameters and utilizes a reel packaging format.
Feature Summary
- N-channel enhancement-mode Lateral MOSFET technology optimized for high gain and broadband performance
- Integrated electrostatic discharge (ESD) protection circuitry
- Designed for maximum gain and insertion phase flatness in common-source amplifier configurations
- Capable of handling 10:1 VSWR under specified operating conditions
Applications
- Large-signal common-source amplifier applications in 26-volt base station equipment
- Broadband commercial applications with frequencies up to 1.0 GHz
- Industrial applications requiring high thermal stability and gain flatness
Procurement Notes
Verify the specific suffix 'GMR1' against official manufacturer documentation, as standard datasheets typically list 'LR1', 'LSR1', or 'MBR1'. Confirm lead time and availability directly with authorized distributors, as stock levels fluctuate. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing process. Cross-reference the part number with the latest revision of the MRF9030 datasheet to confirm pinout and electrical specifications match your design needs.
Selection Notes
Select this component for designs requiring a 30-watt RF power output at 26 volts within the sub-GHz frequency range. It is suitable for applications demanding high linearity, indicated by -32.5 dBc IMD performance at 945 MHz. Consider its thermal stability and VSWR tolerance for robust base station implementations. Ensure the PCB layout supports the required impedance matching for optimal gain and efficiency at the target operating frequency.
Part Context
The MRF9030 belongs to Freescale Semiconductor's RF Sub-Micron MOSFET line, which includes variants like MRF9030LR1 and MRF9030LSR1. These devices are N-channel enhancement-mode lateral MOSFETs intended for broadband use. The family is known for high gain and suitability for 26-volt base station equipment, offering a balance of power, efficiency, and thermal performance for commercial and industrial RF applications.
Replacement Considerations
Official substitutes include MRF9030LR1, MRF9030LSR1, and MRF9030MBR1. Verify that the suffix indicates identical electrical characteristics and packaging before substitution.
