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Product Detailed Parameters
- Description：RF MOSFET LDMOS TO270-2
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：LDMOS
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：TO-270BA
- Supplier Device Package：TO-270-2 GULL
- Configuration：-
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Overview
The MRF9030GNR1 is an N-channel enhancement-mode lateral MOSFET from the RF Sub-Micron line, designed for broadband commercial and industrial applications up to 1.0 GHz. It operates with a drain-source breakdown voltage of 68 V and a test voltage of 28 V. The device delivers 30 W PEP output power at 945 MHz with 19 dB gain and 41.5% efficiency under typical two-tone conditions. It features integrated ESD protection and handles 10:1 VSWR.
Feature Summary
- N-channel enhancement-mode Lateral MOSFET technology
- Integrated electrostatic discharge (ESD) protection
- High gain and broadband performance characteristics
- Excellent thermal stability
Applications
- Broadband commercial base station equipment
- Industrial amplifier applications
- Large-signal common-source amplifier circuits
Procurement Notes
Verify the specific suffix 'GNR1' against official NXP or Freescale documentation, as standard datasheets often list 'LR1' or 'MBR1'. Confirm lead time and availability directly with authorized distributors, as this specific variant may have limited stock or be discontinued. Ensure the ordering part number matches the required package and reel specifications for your manufacturing process.
Selection Notes
Select this component for applications requiring high gain and broadband operation up to 1.0 GHz. It is suitable for 26-volt base station equipment where large-signal amplification is necessary. Consider its thermal stability and ESD protection features for robust design. Verify that the 68 V breakdown voltage meets the system's peak voltage requirements.
Part Context
This device belongs to the MRF9030 family of RF Power Field Effect Transistors. The family includes variants such as MRF9030, MRF9030LR1, and MRF9030LSR1. These transistors are characterized by their sub-micron MOSFET technology, offering high performance in commercial and industrial radio frequency applications.
Replacement Considerations
Official substitutes within the same family include MRF9030LR1 and MRF9030LSR1. Verify pinout compatibility and electrical parameters before substitution. Consult the manufacturer's cross-reference guide for approved replacements.
