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The MRF9045LR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It delivers 45 Watts PEP output power at 945 MHz with 18.8 dB gain and 42% efficiency under typical two-tone conditions. The device operates at 28 Volts, handles 10:1 VSWR, and features integrated ESD protection. Maximum ratings include a drain-source voltage of 65 Vdc and total device dissipation of 125 W.
Verify the specific package type required, as the LR1 suffix denotes the NI-360 case style. Confirm RoHS compliance status and lead plating specifications against current manufacturing standards. Check for obsolescence notices or lifetime buy availability, as this component may be subject to discontinuation. Ensure compatibility with existing thermal management designs given the specified junction-to-case thermal resistance.
Select this component for high-power RF amplification requiring broadband performance up to 1 GHz. Consider the 125 W power dissipation capability and 1.4 °C/W thermal resistance for heat sink design. Evaluate the 65 V drain-source breakdown voltage against system supply requirements. Verify that the 28 V operating voltage aligns with the target application's power supply infrastructure.
This part belongs to the MRF9045 family of RF Power Field Effect Transistors manufactured by Freescale Semiconductor, now NXP Semiconductors. The MRF9045LR1 specifically utilizes the NI-360 surface mount package. It is engineered for robust performance in demanding RF environments, offering ruggedness and reliability for base station transmitter stages.
MRF9045LSR1 is a documented substitute within the same datasheet, differing primarily in packaging format.