MRF9045LSR1

Overview

The MRF9045LSR1 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 65 Vdc with a typical output power of 45 Watts PEP at 945 MHz and 28 Volts. The device provides a power gain of 18.8 dB, drain efficiency of 42%, and third-order intermodulation distortion of -32 dBc under two-tone conditions. It features integrated ESD protection and is characterized by series equivalent large-signal impedance parameters.

Feature Summary

• Designed for maximum gain and insertion phase flatness in common-source amplifier applications.
• Features excellent thermal stability and integrated electrostatic discharge (ESD) protection.
• Characterized with series equivalent large-signal impedance parameters for design optimization.

Applications

• Broadband commercial and industrial applications with frequencies up to 1000 MHz.
• Large-signal, common-source amplifier applications in 28 volt base station equipment.

Procurement Notes

Verify component authenticity through authorized channels as the part is marked as a lifetime buy with specific last order and ship dates documented in the datasheet. Confirm RoHS compliance status and lead plating thickness specifications corresponding to the LS suffix before procurement integration.

Selection Notes

Select this component for designs requiring high gain and broadband performance around 945 MHz. Ensure the application supports a 28 Vdc supply and accommodates the NI-360S package dimensions. Validate thermal management capabilities against the specified junction-to-case thermal resistance values for reliable operation.

Part Context

This RF power field effect transistor belongs to the MRF9045 family from Freescale Semiconductor, now NXP USA Inc. It is specifically engineered for high-power RF amplification tasks where linearity and efficiency are critical within the UHF frequency range.

Replacement Considerations

MRF9045LR1