MRF9045NBR1

Overview

The MRF9045NBR1 is an N-channel enhancement-mode lateral MOSFET (LDMOS) designed for broadband commercial and industrial applications up to 1.0 GHz. It operates at a test voltage of 28 V with a drain current of 350 mA, delivering 45 W output power at 945 MHz with 19 dB gain. The device features a TO-272-2 package, a rated voltage of 65 V, and integrated ESD protection.

Feature Summary

• High gain and broadband performance suitable for large-signal common-source amplifier applications in 28-volt base station equipment.
• Guaranteed ruggedness capable of handling 5:1 VSWR at 28 Vdc and 945 MHz with 45 Watts CW output power.
• Excellent thermal stability characterized with series equivalent large-signal impedance parameters.

Applications

• Broadband commercial and industrial applications with frequencies up to 1000 MHz
• Large-signal, common-source amplifier applications in 28 volt base station equipment
• GSM EDGE applications across the full frequency band of 920 - 960 MHz

Procurement Notes

Verify component authenticity through authorized channels as this part may be obsolete. Confirm RoHS compliance status, as documentation indicates non-compliance for some variants. Check moisture sensitivity level 3 requirements for storage and handling. Ensure the specific suffix matches the required packaging configuration for integration.

Selection Notes

Select this LDMOS transistor for designs requiring high power output and efficiency in the 900 MHz range. Consider the 28 V operating voltage and TO-272-2 package constraints. Evaluate thermal management needs due to high power dissipation. Verify compatibility with existing bias networks and impedance matching circuits for optimal performance.

Part Context

This component belongs to the MRF90 series of RF power field effect transistors originally developed by Freescale Semiconductor, now NXP USA Inc. These devices are engineered for robust performance in cellular infrastructure. The MRF9045 variant specifically targets GSM and CDMA bands, offering a balance of gain, efficiency, and ruggedness for base station power amplifiers.

Replacement Considerations

Public confirmed substitute part numbers include MRF9045NR1 and MRF9045LSR1. Verify pinout and package compatibility before substitution. Review updated datasheets for any changes in electrical characteristics or recommended operating conditions.

FAQ

What is the typical drain efficiency for GSM applications?

For typical GSM performance at 920-960 MHz with 45 Watts output, the drain efficiency is 68%.

Does the device include electrostatic discharge protection?

Yes, the MRF9045NBR1 includes integrated ESD protection.

What is the guaranteed load VSWR capability?

The device is guaranteed to handle a load VSWR of 5:1 at 28 Vdc, 945 MHz, with 45 Watts CW output power.