MRF9045NR1

Overview

The MRF9045NR1 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 65 Vdc with a typical output power of 45 Watts PEP at 945 MHz. The device provides a power gain of 19 dB and a drain efficiency of 41% under two-tone conditions. It features integrated ESD protection, excellent thermal stability, and guaranteed ruggedness at a load VSWR of 5:1.

Feature Summary

• Integrated electrostatic discharge (ESD) protection
• Guaranteed ruggedness at high load VSWR
• Excellent thermal stability
• Dual-lead boltdown package suitable for surface mount

Applications

• Broadband commercial base station equipment
• Industrial RF amplifier applications
• Large-signal common-source amplifiers

Procurement Notes

Verify the component status before procurement as this part is marked not recommended for new design. Confirm that the R1 suffix corresponds to the required tape and reel packaging quantity. Ensure compatibility with existing designs due to potential obsolescence or replacement by newer series components.

Selection Notes

Select this component for applications requiring high power output in the 930 to 960 MHz frequency range. Consider the TO-270-2 plastic package for mounting flexibility. Evaluate thermal management requirements given the maximum junction temperature rating. Verify that the 28 Vdc supply voltage aligns with system specifications.

Part Context

This device belongs to the RF Power Field Effect Transistor line from Freescale Semiconductor, now NXP USA Inc. It is characterized as a lateral N-channel broadband RF power MOSFET. The product documentation indicates it was originally manufactured by Motorola before transitioning to Freescale.

Replacement Considerations

Consult official manufacturer documentation for current alternative part numbers. The datasheet explicitly states the device is not recommended for new designs. Verify pinout and electrical characteristics if substituting with other LDMOS transistors in the same family.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is +65 Vdc.

Is the MRF9045NR1 RoHS compliant?

Yes, the N suffix indicates lead-free terminations and the device is RoHS compliant.

What is the guaranteed load VSWR capability?

The device guarantees ruggedness at a load VSWR of 5:1 at 28 Vdc and 945 MHz.