MRF9060LR1

Overview

The MRF9060LR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 65 Vdc with a total device dissipation of 159 W at 25°C case temperature. The component delivers 60 Watts PEP output power at 945 MHz, achieving 17 dB power gain and 40% efficiency under typical two-tone conditions. It features integrated ESD protection and excellent thermal stability.

Feature Summary

• Integrated electrostatic discharge (ESD) protection
• Designed for maximum gain and insertion phase flatness
• Excellent thermal stability characteristics
• Characterized with series equivalent large-signal impedance parameters

Applications

• Broadband commercial applications
• Industrial applications
• Large-signal common-source amplifier applications in 26 volt base station equipment

Procurement Notes

Verify the specific ordering suffix 'L' against current manufacturer documentation to confirm lead plating thickness specifications. Confirm package style compatibility with NI-360 mounting requirements. Ensure procurement channels provide valid traceability for this archived Freescale Semiconductor product line.

Selection Notes

Select this component for designs requiring high power output around 945 MHz with 26 Vdc supply rails. Evaluate thermal management capabilities given the 159 W dissipation rating. Consider the NI-360 package dimensions for PCB layout constraints. Verify input and output matching networks against the provided source and load impedance data.

Part Context

This part belongs to the MRF9060 family of RF Power Field Effect Transistors manufactured by Freescale Semiconductor. It shares functional similarities with the MRF9060LSR1 variant, differing primarily in packaging style and lead specifications. The family targets high-performance RF power amplification in the sub-gigahertz range.

Replacement Considerations

MRF9060LSR1