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The MRF9060LSR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 65 Vdc with a maximum total device dissipation of 219 W. At 945 MHz and 26 Vdc, it delivers 60 Watts PEP output power with 17 dB gain and 40% efficiency. The component features integrated ESD protection and is characterized by series equivalent large-signal impedance parameters.
Verify the specific ordering suffix 'L' indicates nominal lead gold plating thickness of 40μ″ and 'R1' denotes tape and reel packaging containing 500 units per 32 mm, 13 inch reel. Confirm RoHS compliance status through official documentation before procurement. Ensure compatibility with NI-360S package dimensions for PCB layout integration.
Select this component for high-power RF amplification requiring broadband performance up to 1 GHz. Evaluate thermal resistance characteristics suitable for the intended heat sink configuration. Verify that the 65 Vdc drain-source voltage rating aligns with the system's supply voltage requirements. Consider the 10:1 VSWR handling capability for robust operation in varying load conditions.
This part belongs to the MRF9060 family of RF Power Field Effect Transistors manufactured by Freescale Semiconductor, now NXP Semiconductors. The MRF9060LR1 variant shares similar electrical specifications but utilizes the NI-360 package instead of the NI-360S package used by the MRF9060LSR1. Both are lateral N-channel devices optimized for 26V base station environments.
MRF9060LR1 is a direct functional substitute within the same family, differing primarily in the physical package style (NI-360 vs. NI-360S). Verify mechanical fit and pinout compatibility when substituting.