MRF9060LSR1

MRF9060LSR1

$36.62
  • Description:RF MOSFET LDMOS 26V NI360
  • Series:-

SKU:50d5d5276400 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 26V NI360
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:945MHz
  • Gain:17dB
  • Voltage - Test:26 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:450 mA
  • Power - Output:60W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-360S
  • Supplier Device Package:NI-360S
  • Configuration:-

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MRF9060LSR1

Overview

The MRF9060LSR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 65 Vdc with a maximum total device dissipation of 219 W. At 945 MHz and 26 Vdc, it delivers 60 Watts PEP output power with 17 dB gain and 40% efficiency. The component features integrated ESD protection and is characterized by series equivalent large-signal impedance parameters.

Feature Summary

  • Integrated electrostatic discharge (ESD) protection
  • Designed for maximum gain and insertion phase flatness
  • Excellent thermal stability
  • Characterized with series equivalent large-signal impedance parameters

Applications

  • Large-signal common-source amplifier applications in 26 volt base station equipment
  • Broadband commercial applications
  • Broadband industrial applications

Procurement Notes

Verify the specific ordering suffix 'L' indicates nominal lead gold plating thickness of 40μ″ and 'R1' denotes tape and reel packaging containing 500 units per 32 mm, 13 inch reel. Confirm RoHS compliance status through official documentation before procurement. Ensure compatibility with NI-360S package dimensions for PCB layout integration.

Selection Notes

Select this component for high-power RF amplification requiring broadband performance up to 1 GHz. Evaluate thermal resistance characteristics suitable for the intended heat sink configuration. Verify that the 65 Vdc drain-source voltage rating aligns with the system's supply voltage requirements. Consider the 10:1 VSWR handling capability for robust operation in varying load conditions.

Part Context

This part belongs to the MRF9060 family of RF Power Field Effect Transistors manufactured by Freescale Semiconductor, now NXP Semiconductors. The MRF9060LR1 variant shares similar electrical specifications but utilizes the NI-360 package instead of the NI-360S package used by the MRF9060LSR1. Both are lateral N-channel devices optimized for 26V base station environments.

Replacement Considerations

MRF9060LR1 is a direct functional substitute within the same family, differing primarily in the physical package style (NI-360 vs. NI-360S). Verify mechanical fit and pinout compatibility when substituting.

MRF9060LSR1MRF9060LSR1
$36.62
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