MRF9135LR3

MRF9135LR3

$80.50
  • Description:RF MOSFET LDMOS 26V NI780
  • Series:-

SKU:a472ad0ba8f9 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 26V NI780
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:865MHz ~ 895MHz
  • Gain:17.8dB
  • Voltage - Test:26 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:1.1 A
  • Power - Output:135W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-957A
  • Supplier Device Package:NI-780H-2L
  • Configuration:-

Download product information

MRF9135LR3

Overview

The MRF9135LR3 is an RF power LDMOS transistor designed for broadband applications in the 470 to 860 MHz frequency range. It features a ruggedized lateral MOSFET structure suitable for commercial and industrial broadcast environments. The device operates with high efficiency and linearity, supporting typical performance metrics such as gain and drain efficiency under specified bias conditions. It utilizes a ceramic flatpack package for thermal management and signal integrity.

Feature Summary

  • Enhancement-mode lateral MOSFET technology optimized for broadband RF power amplification
  • Ruggedized design suitable for demanding commercial and industrial broadcast applications
  • Operates effectively across the 470 to 860 MHz frequency spectrum
  • High linearity and efficiency characteristics for signal fidelity

Applications

  • Broadband radio frequency power amplification
  • Commercial broadcast transmitter systems
  • Industrial RF heating and plasma generation
  • Test and measurement equipment RF sources

Procurement Notes

Verify the specific revision level and packaging variant against the official NXP/Freescale datasheet prior to ordering. Confirm that the supplier provides traceability documentation consistent with the original manufacturer's standards. Ensure compatibility with the intended thermal interface and mounting requirements for the flatpack configuration.

Selection Notes

Select this component when designing amplifiers for the 470-860 MHz band requiring robust LDMOS performance. Consider the thermal resistance of the ceramic package and the required bias voltage levels for optimal efficiency. Evaluate the need for linearization techniques if operating with high peak-to-average power ratio signals in broadcast scenarios.

Part Context

This part belongs to the family of RF power LDMOS transistors originally developed by Freescale Semiconductor, now managed by NXP Semiconductors. These devices are engineered to replace older bipolar technologies, offering superior power density and reliability for wideband amplifier designs used in professional broadcasting and industrial RF systems.

Replacement Considerations

Consult official substitution guides for direct replacements within the MRF9xxx series or equivalent NXP LDMOS parts. Verify pinout compatibility and thermal specifications when considering cross-brand alternatives from other semiconductor manufacturers.

MRF9135LR3MRF9135LR3
$80.50
Buy Now