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The MRF9135LR5 is an N-channel silicon RF power MOSFET designed for Ultra High Frequency (UHF) band applications. Manufactured by Freescale Semiconductor, this component utilizes LDMOS technology to deliver high performance in a compact surface-mount package. The device operates with a drain voltage of 26V and supports frequencies up to 880MHz. It provides a gain of 17.8dB and handles output power levels around 25W. The part is housed in the NI-780H-2L package, ensuring reliable thermal management and electrical stability for demanding RF transmission environments.
Verify the manufacturer marking matches Freescale Semiconductor or NXP Semiconductors to ensure authenticity. Confirm the package type is NI-780H-2L and check for RoHS compliance status. Request original datasheets to validate electrical parameters against application requirements before finalizing procurement decisions.
Select this component when designing circuits requiring robust RF power amplification in the UHF range. Ensure the system voltage aligns with the 26V drain specification. Consider the thermal characteristics of the NI-780H-2L package for adequate heat dissipation in high-power continuous operation scenarios.
This part belongs to the MRF series of RF power transistors from Freescale Semiconductor. It serves as a discrete active component within larger RF amplifier modules. The LR5 suffix typically denotes specific packaging or testing configurations within the product line, distinguishing it from other variants in the same family.
Consult official substitution lists for compatible LDMOS devices from NXP or Freescale. Verify pinout compatibility and thermal resistance values when considering alternative packages. Cross-reference electrical specifications to ensure equivalent gain and power handling capabilities.