ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET LDMOS 26V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：880MHz
- Gain：17.8dB
- Voltage - Test：26 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.1 A
- Power - Output：25W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-780S
- Supplier Device Package：NI-780S
- Configuration：-
Download product information
Overview
The MRF9135LSR5 is an RF LDMOS FET manufactured by NXP USA Inc., designed for high-power applications in the 880 MHz frequency range. It features a 26 V drain-source voltage rating and delivers 25 W of output power with a gain of 17.8 dB. The device operates with a test current of 1.1 A and utilizes the NI-780S package, suitable for base station amplifier designs requiring robust performance at UHF frequencies.
Feature Summary
- High-efficiency LDMOS technology optimized for linear RF amplification
- Robust thermal management capabilities integrated within the NI-780S package
- Designed for stable operation in high-power UHF transmitter stages
Applications
- UHF cellular base station power amplifiers
- Broadband wireless communication systems
- Public safety radio infrastructure
Procurement Notes
Verify component authenticity through authorized NXP distributors or certified partners. Request official datasheets and RoHS compliance certificates to ensure adherence to environmental standards. Confirm that the NI-780S package matches your PCB footprint requirements before finalizing orders. Validate lot traceability to prevent counterfeit components from entering the supply chain.
Selection Notes
Select this component when designing amplifiers for the 880 MHz band requiring 25 W output. Ensure the thermal design supports the heat dissipation needs of the NI-780S package. Compare gain and linearity specifications against system requirements to confirm suitability for UHF applications.
Part Context
This part belongs to the MRF series of RF power transistors from NXP, widely used in telecommunications infrastructure. The LDMOS technology provides a balance of power density and efficiency, making it a standard choice for base station PA modules in mobile network deployments.
Replacement Considerations
Consult NXP documentation for direct pin-compatible alternatives within the MRF family. Verify electrical parameter equivalence for any substitute parts to maintain system performance integrity.
