MRF9180R5

Overview

The MRF9180R5 is an RF MOSFET transistor manufactured by NXP USA Inc., designed for high-power radio frequency applications. It operates at a center frequency of 880 MHz and delivers a power output of 170 W. The device requires a supply voltage of 26 V and features a gain of 17.5 dB with a drain current of 1.4 A. It is housed in the NI-1230 package, providing a robust solution for RF amplification tasks.

Feature Summary

• High power output capability suitable for demanding RF environments
• Optimized performance at 880 MHz operating frequency
• Integrated design within the NI-1230 package for efficient thermal management

Applications

• RF power amplification
• Broadcast transmitter systems
• Industrial RF heating equipment

Procurement Notes

Verify component authenticity through authorized channels as this part may be obsolete. Confirm package integrity and pin alignment against the official datasheet before integration. Ensure supply chain documentation matches the specific MRF9180R5 designation to avoid substitution errors with similar variants like the R6 model.

Selection Notes

Select this component when a 170 W output at 880 MHz is required. Consider the 26 V supply requirement and NI-1230 footprint constraints during PCB layout. Evaluate thermal dissipation needs given the high power density and ensure the application environment supports the specified electrical parameters.

Part Context

This RF MOSFET belongs to NXP's portfolio of high-performance semiconductor devices. It serves as a critical active element in linear amplifier stages. The NI-1230 packaging facilitates surface-mount assembly, supporting modern manufacturing techniques while maintaining reliability in continuous wave operations typical of communication infrastructure.

Replacement Considerations

The MRF9180R6 is a confirmed substitute part number with identical specifications. Verify that the replacement variant meets all mechanical and electrical requirements of the original design before implementation.