MRF9180R6

$166.20

Description：RF MOSFET LDMOS 26V NI1230
Series：-

SKU:e37caf5d6576 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 26V NI1230
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：880MHz
Gain：17.5dB
Voltage - Test：26 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：1.4 A
Power - Output：170W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-1230
Supplier Device Package：NI-1230
Configuration：-

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MRF9180R6

Overview

The MRF9180R6 is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband commercial and industrial applications operating between 865 MHz and 895 MHz. It features high gain, high efficiency, and high linearity, making it suitable for large-signal common-source amplifier applications in 26-volt base station equipment. The device is internally matched for ease of use and includes integrated ESD protection. It is housed in a NI-1230 package (Case 375D-05) and is supplied in tape and reel format.

Feature Summary

Internally matched for simplified circuit integration
High gain, high efficiency, and high linearity performance
Integrated electrostatic discharge (ESD) protection
Designed for maximum gain and insertion phase flatness

Applications

Broadband commercial applications
Industrial applications
Large-signal common-source amplifier applications
26-volt base station equipment

Procurement Notes

Verify the current lifecycle status before procurement planning. This component is archived and no longer manufactured by Freescale Semiconductor. Confirm availability through authorized distributors or secondary markets if sourcing is required. Ensure that any replacement components meet the original electrical specifications and thermal requirements.

Selection Notes

Select this component for designs requiring operation within the 865 MHz to 895 MHz frequency range with a 26-volt supply. Consider its internal matching capabilities to reduce external component count. Evaluate thermal management solutions due to the high power dissipation characteristics. Verify compatibility with existing PCB layouts and mounting hardware for the NI-1230 package.

Part Context

This part belongs to the MRF9180 series of RF power field-effect transistors. Originally developed by Freescale Semiconductor, which has since transitioned to NXP Semiconductors. The datasheet revision history indicates the document was archived in December 2009, marking the end of active manufacturing support.