MRF9210R3

Overview

The MRF9210R3 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications operating between 865 MHz and 895 MHz. It provides a typical output power of 40 watts at 880 MHz with a drain efficiency of 25.5% under CDMA conditions. The device features internal matching, integrated ESD protection, and excellent thermal stability. Maximum ratings include a drain-source voltage of 65 Vdc, gate-source voltage of 15 Vdc, and total device dissipation of 565 W at 25°C case temperature.

Feature Summary

• Designed specifically for push-pull operation in large-signal common source amplifier configurations.
• Internally matched on both input and output ports to simplify circuit design.
• Integrated electrostatic discharge (ESD) protection compliant with Human Body Model Class 1 standards.
• Characterized using series equivalent large-signal impedance parameters for accurate modeling.

Applications

• Broadband commercial and industrial RF amplifiers
• Base station equipment operating in the 865-895 MHz range
• Large-signal common source amplifier designs

Procurement Notes

Verify component authenticity through authorized channels as this part is archived and no longer manufactured by Freescale Semiconductor. Confirm package integrity and pin alignment against CASE 375G-04 specifications before integration. Ensure handling procedures account for the specific thermal requirements and maximum junction temperature limits defined in the datasheet.

Selection Notes

Select this component for applications requiring high gain and broadband performance within the 865 to 895 MHz frequency band. Evaluate thermal management capabilities carefully due to the 565 W dissipation rating and 0.31 °C/W thermal resistance. Ensure the design supports push-pull topology as single-ended use is not recommended. Validate impedance matching networks using the provided series equivalent large-signal parameters.

Part Context

The MRF9210R3 belongs to the family of RF power lateral MOSFETs developed by Freescale Semiconductor. It utilizes a NI-860C3 package style and is housed in a CASE 375G-04 footprint. The device was originally marketed for base station applications requiring robust performance in the GSM/DCS bands. Documentation indicates it has been archived and is no longer in active production.

Replacement Considerations

No direct public substitute part numbers are confirmed in the provided documentation. As the MRF9210R3 is archived, designers should consult current NXP or Freescale portfolios for updated lateral MOSFET alternatives suitable for 865-895 MHz operations.