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Product Detailed Parameters
- Description：RF MOSFET LDMOS 32V NI860C3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Bulk
- Technology：LDMOS
- Frequency：857MHz ~ 863MHz
- Gain：20.4dB
- Voltage - Test：32 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.6 A
- Power - Output：270W
- Voltage - Rated：66 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-860C3
- Supplier Device Package：NI-860C3
- Configuration：-
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Overview
The MRFE6P3300HR3 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications between 470 and 860 MHz. It operates at a maximum drain-source voltage of 66 Vdc with a typical case operating temperature of 150 °C. At 860 MHz, it delivers 270 Watts PEP output power with 20.4 dB gain and 44.8% efficiency under 32 Vdc bias. The device features internal input and output matching, integrated ESD protection, and is qualified for push-pull operation only.
Feature Summary
- Internally matched for ease of use
- Designed for push-pull operation only
- Integrated ESD protection
Applications
- Large-signal common-source amplifier applications
- 32 volt analog television transmitter equipment
- 32 volt digital television transmitter equipment
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The R3 suffix indicates a reel containing 250 units on a 56 mm, 13 inch tape. Confirm RoHS compliance status and ensure the application strictly utilizes push-pull configurations as required by the datasheet specifications.
Selection Notes
Select this component for broadband RF power amplification in the 470 to 860 MHz range. Ensure the design supports push-pull topology exclusively. Verify thermal management capabilities to maintain junction temperatures within the specified 225 °C limit during high-power operation.
Part Context
This part belongs to the Freescale Semiconductor RF Power Field Effect Transistor family. It is specifically engineered for high-gain, broadband performance in television transmission systems. The device utilizes Lateral N-Channel technology optimized for ruggedness and large-signal applications.
Replacement Considerations
No verified substitute part numbers are documented in the provided source material.
FAQ
Is the MRFE6P3300HR3 suitable for single-ended operation?
No, the device is designed for push-pull operation only.
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDSS) is rated at +66 Vdc.
Does the device include internal impedance matching?
Yes, the device is internally matched both on the input and output for ease of use.
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