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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI860C3
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：LDMOS
- Frequency：880MHz
- Gain：20dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.6 A
- Power - Output：47W
- Voltage - Rated：66 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：NI-860C3
- Supplier Device Package：NI-860C3
- Configuration：-
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Overview
The MRFE6P9220HR3 is an RF LDMOS power transistor manufactured by Freescale Semiconductor. It operates at a frequency of 880MHz with a gain of 20dB. The device features a drain-to-source voltage rating of 66V and a test voltage of 28V, drawing a test current of 1.6A. It delivers an output power of 47W and is housed in the NI-860C3 surface-mount package. This component is designed for high-performance radio frequency applications requiring robust power handling capabilities.
Feature Summary
- Utilizes LDMOS technology for enhanced RF performance
- Designed for high-power output applications
- Surface-mount packaging for efficient integration
Applications
- RF power amplification
- Base station transmitters
- Wireless communication systems
Procurement Notes
Verify the manufacturer part number MRFE6P9220HR3 against official Freescale Semiconductor documentation to ensure authenticity. Confirm that the NI-860C3 package matches your design requirements. Check RoHS compliance status as specified in the datasheet. Ensure the supplier provides valid traceability documents. Validate electrical parameters against the official specification sheet before procurement.
Selection Notes
Select this component when designing circuits requiring 47W output power at 880MHz. Consider the 66V drain voltage rating for system headroom. The NI-860C3 package dictates thermal management and PCB layout strategies. Evaluate the 20dB gain requirement against amplifier stage needs. Ensure compatibility with 28V operating conditions typical in RF infrastructure.
Part Context
This part belongs to the MRFE6 series of RF power transistors from Freescale Semiconductor. The series is known for LDMOS technology used in demanding RF environments. The MRFE6P9220HR3 variant specifically targets high-power applications. It represents a solution for modern wireless infrastructure needs.
Replacement Considerations
Consult official Freescale Semiconductor substitution guides for verified alternatives. Cross-reference pinouts and electrical specifications carefully. Ensure any substitute maintains the NI-860C3 package or requires adapter solutions. Verify compatibility with existing thermal and RF designs.
