MRFE6S9046GNR1

Description：RF MOSFET LDMOS 28V TO270-4
Series：-

SKU:2ee40f5a9bac Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V TO270-4
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：960MHz
Gain：19dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：300 mA
Power - Output：35.5W
Voltage - Rated：66 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-270BB
Supplier Device Package：TO-270 WB-4 Gull
Configuration：-

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MRFE6S9046GNR1

Overview

The MRFE6S9046GNR1 is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for GSM and GSM EDGE base station applications operating between 920 MHz and 960 MHz. It delivers a typical continuous wave output power of 35.5 Watts at 28 Volts with 57% drain efficiency. The device features internal matching, integrated ESD protection, and a ruggedized design capable of handling 5:1 VSWR under overdrive conditions.

Feature Summary

Internally matched input and output networks to simplify circuit design
Integrated electrostatic discharge (ESD) protection mechanisms
Enhanced ruggedness with capability to withstand high voltage standing wave ratios during overdrive events

Applications

GSM base station power amplification
GSM EDGE base station power amplification
Multicarrier amplifier applications in the 920-960 MHz band

Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation to confirm package style and reel specifications. Confirm RoHS compliance status and moisture sensitivity level ratings prior to integration into manufacturing processes. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the official datasheet.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the 920-960 MHz frequency range. Evaluate thermal constraints carefully as the device operates at significant power levels. Consider the internal matching characteristics when designing surrounding passive components to optimize gain flatness and return loss performance across the operational bandwidth.

Part Context

This part belongs to the MRFE6S9046N series of lateral N-channel RF power MOSFETs manufactured by Freescale Semiconductor. These devices are engineered specifically for broadband commercial and industrial applications, offering robust performance in cellular infrastructure environments where reliability and signal integrity are critical requirements.