MRFE6S9046NR1

Overview

The MRFE6S9046NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for RF power applications. It operates within the 824 to 894 MHz frequency range, delivering a typical output power of 46 Watts average at 28 Volts. The device features a drain-source breakdown voltage of 65 Volts and a continuous drain current of 1.5 Amperes. Packaged in a TO-270WB-4 housing, it utilizes screw mount installation. Key electrical parameters include a gain of approximately 17 dB and a threshold voltage of 2.2 Volts, supporting efficient amplification in broadband cellular base station environments.

Feature Summary

• N-Channel Enhancement-Mode Lateral MOSFET technology optimized for high-power RF amplification
• Broadband operational capability covering the 824 to 894 MHz spectrum
• Robust thermal management design suitable for direct heatsink attachment via screw mount
• High ruggedness construction engineered for demanding cellular base station amplifier duties

Applications

• N-CDMA cellular base station power amplifiers
• Broadband RF power amplification circuits
• Multi-carrier amplifier systems operating in the 800 MHz band

Procurement Notes

Verify component authenticity through authorized distribution channels due to potential availability from secondary markets. Confirm RoHS compliance status and specific revision markings on the package prior to integration. Ensure proper handling procedures are followed as the device may be moisture sensitive. Validate that the TO-270WB-4 footprint matches the target PCB layout requirements before finalizing procurement orders.

Selection Notes

Select this component when designing amplifiers requiring 46 Watts output power within the 824-894 MHz band. It serves as a suitable replacement for legacy devices in existing N-CDMA infrastructure designs. Consider the TO-270WB-4 package constraints and thermal dissipation needs during circuit board layout. Evaluate gate drive requirements against the specified threshold voltage to ensure stable operation under varying load conditions.

Part Context

This part belongs to the Freescale Semiconductor MRFE6S series of RF power LDMOS transistors. The series is characterized by enhancement-mode operation and lateral structure, targeting high-efficiency performance in wireless communication infrastructure. These components are engineered to meet the rigorous linearity and power density demands of modern cellular base stations.

Replacement Considerations

Direct substitutes include the MRF6S9046N variant. Verify pinout compatibility and thermal characteristics when transitioning between these specific part numbers to ensure seamless integration into existing amplifier modules without redesigning the matching network.