MRFE6S9135HR5

Overview

The MRFE6S9135HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at 28 V with a drain-source voltage rating of 66 Vdc. Typical single-carrier W-CDMA performance at 940 MHz yields 39 Watts average output power, 21 dB power gain, and 32.3% drain efficiency. The device features integrated ESD protection and is optimized for Doherty applications.

Feature Summary

• Optimized for Doherty amplifier configurations
• Internally matched input and output circuits
• Integrated electrostatic discharge (ESD) protection
• Qualified for operation up to 32 VDD

Applications

• Large-signal common-source amplifier applications in base station equipment
• Broadband commercial and industrial RF applications
• Single-carrier W-CDMA signal amplification

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The datasheet explicitly defines the R3 suffix as tape and reel packaging containing 250 units per 56 mm reel. Confirm that the HR5 suffix corresponds to the intended package style and quantity before procurement.

Selection Notes

Select this component for designs requiring high gain and broadband performance up to 1000 MHz. Ensure the application supports the specified 28 V operating voltage and thermal management requirements for junction temperatures up to 225 °C. Verify impedance matching networks using the provided series equivalent large-signal impedance parameters.

Part Context

This part belongs to the Freescale Semiconductor MRF6S family of RF Power Field Effect Transistors. These devices are lateral N-channel enhancement-mode MOSFETs specifically engineered for ruggedness and high linearity in wireless infrastructure environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.