MRFE6S9135HSR3

Overview

The MRFE6S9135HSR3 is an RF power LDMOS transistor manufactured by Freescale Semiconductor. It is designed for broadband applications in the VHF and UHF frequency ranges, typically covering 470 to 860 MHz. The device features a robust N-channel enhancement-mode lateral MOSFET structure housed in a NI-780S surface-mount package. Key electrical characteristics include a drain-source breakdown voltage of 66V and a rated operating voltage of 28V. It delivers high output power with significant gain, suitable for demanding radio frequency amplification tasks.

Feature Summary

• Enhancement-mode N-channel Lateral MOSFET (LDMOS) technology for high reliability
• Broadband design optimized for commercial and industrial applications across VHF/UHF bands
• NI-780S surface-mount package for efficient thermal management and PCB integration

Applications

• Commercial broadcast transmitters
• Industrial heating and plasma generation systems
• RF power amplification in communication infrastructure

Procurement Notes

Verify the exact datasheet revision and manufacturer documentation before procurement, as component specifications may vary between Freescale and NXP Semiconductors releases. Confirm that the NI-780S package dimensions match your PCB footprint requirements. Ensure compliance with RoHS directives if required for your specific application environment. Cross-reference part numbers carefully to distinguish between similar variants in the MRFE6S series.

Selection Notes

Select this component when a broadband RF solution is required for frequencies between 470 MHz and 860 MHz. The 66V breakdown voltage allows for operation at standard 28V supply rails while maintaining safety margins. Consider the NI-780S package for its thermal performance in high-power density designs. Evaluate the gain and efficiency metrics against your system's linearity and power consumption constraints.

Part Context

This part belongs to the MRFE6S family of RF power transistors from Freescale Semiconductor, now part of NXP Semiconductors. These devices are engineered for high-efficiency amplification in broadband scenarios. The MRFE6S9135HSR3 shares architectural similarities with other members like the MRFE6S9130HSR3 and MRFE6S9200HR3, differing primarily in specific power and frequency optimization targets within the same broad operational envelope.

Replacement Considerations

Direct substitutes may include other MRFE6S series parts such as the MRFE6S9130HSR3 or MRFE6S9200HR3, provided their specific power and frequency ratings align with your design needs. Verify pinout compatibility and thermal resistance values before substitution.