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The MRFE6S9200HR3 is an RF MOSFET transistor from the HV6E series, manufactured by NXP Semiconductors (formerly Freescale). It operates at a frequency of 880 MHz with a drain-source breakdown voltage of 66 V. The device utilizes LDMOS technology and is housed in an NI-880 package. Key electrical parameters include a test voltage of 28 V, a test current of 1.4 A, an output power of 58 W, and a gain of 21 dB. It supports surface mount installation and functions within a temperature range of -65 C to +150 C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific datasheet revisions prior to integration. Ensure supply chain stability as availability may be restricted. Validate package integrity upon receipt to prevent handling damage to the sensitive RF structure.
Select this component for designs requiring 880 MHz operation with moderate power output. Consider the NI-880 package constraints for PCB layout and thermal dissipation requirements. Evaluate the 66 V breakdown voltage against system operating conditions. Compare gain and efficiency metrics against alternative devices in the same frequency band.
This part belongs to the MRFE6 family of RF power transistors, originally developed by Freescale Semiconductor before its acquisition by NXP. The series focuses on lateral MOSFET technologies optimized for wireless infrastructure and broadcast applications. The MRFE6S9200HR3 specifically targets the 880 MHz band, serving as a building block for cellular base station power amplifiers.
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative components from the same manufacturer family.